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MD56V62160H - 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

Datasheet Summary

Description

The MD56V62160/H is a 4-bank 1,048,576-word

16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology.

The device operates at 3.3 V.

The inputs and outputs are LVTTL compatible.

Features

  • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank.
  • 1,048,576-word.
  • 16-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode.
  • CAS latency (2, 3).
  • Burst length (2, 4, 8).
  • Data scramble (sequential, interleave).
  • CBR auto-refresh, Self-refresh capabil.

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Datasheet Details

Part number MD56V62160H
Manufacturer OKI electronic componets
File Size 305.92 KB
Description 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
Datasheet download datasheet MD56V62160H Datasheet
Additional preview pages of the MD56V62160H datasheet.

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Full PDF Text Transcription

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E2G1052-17-X1 ¡ Semiconductor MD56V62160/H ¡ Semiconductor This version: Mar. 1998 MD56V62160/H Pr el im in ar y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES • • • • • • • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank ¥ 1,048,576-word ¥ 16-bit configuration 3.3 V power supply, ± 0.
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