MD56V62400H Overview
The MD56V62400/H is a 4-bank ¥ 4,194,304-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL patible.
MD56V62400H Key Features
- Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank
- 4,194,304-word
- 4-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL patible Output : LVTTL patible Refresh : 4096 cy
- CAS latency (2, 3)
- Burst length (2, 4, 8)
- Data scramble (sequential, interleave)
- CBR auto-refresh, Self-refresh capability
- Package: 54-pin 400 mil plastic TSOP (Type II) (TSOPII54-P-400-0.80-K) (Product : MD56V62400/H-xxTA) xx indicates speed