MSM56V16160DH Description
The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL patible.
MSM56V16160DH Key Features
- Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank
- 524,288-word
- 16-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL patible Output : LVTTL patible Refresh : 4096 c
- CAS latency (1, 2, 3)
- CAS latency (2, 3)-1
- Burst length (1, 2, 4, 8, full page)
- Burst length (1, 2, 4, 8)-1
- Data scramble (sequential, interleave) -1 : H version only
- CBR auto-refresh, Self-refresh capability
- Package: 50-pin 400 mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K) (Product : MSM56V16160D/DH-xxTS-K) xx indicates s