MSM56V16160F Overview
The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL patible.
MSM56V16160F Key Features
- CAS Latency (1,2,3)
- Burst Length (1,2,4,8,Full page)
- Data scramble (sequential , interleave)
- RA10 Column Address : CA0
- CA7 Slects bank to be activated during row address latch time and selects bank for precharge and read/write during colum