Datasheet4U Logo Datasheet4U.com

MSM56V16800F - 2-Bank x 1048576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM

General Description

The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology.

The device operates at 3.3V.

The inputs and outputs are LVTTL compatible.

Key Features

  • Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell 2-bank ´ 1,048,576-word ´ 8bit configuration 3.3V power supply ± 0.3V tolerance Input Output Refresh : LVTTL compatible : LVTTL compatible : 4096 cycles/64 ms Programmable data transfer mode - CAS Latency (1,2,3) - Burst Length (1,2,4,8,Full page) - Data scramble (sequential , interleave).
  • CBR auto-refresh, Self-refresh capability Package: 44-pin 400mil plastic TSOP (Type.

📥 Download Datasheet

Datasheet Details

Part number MSM56V16800F
Manufacturer OKI Electric
File Size 2.91 MB
Description 2-Bank x 1048576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM
Datasheet download datasheet MSM56V16800F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Semiconductor MSM56V16800F 2-Bank ´ 1,048,576 Word ´ 8 Bit SYNCHRONOUS DYNAMIC RAM This version : Dec.1999 DESCRIPTION The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible. FEATURES · · · · · · · Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell 2-bank ´ 1,048,576-word ´ 8bit configuration 3.3V power supply ± 0.