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MSM548128BL - High-Speed PSRAM

Description

The MSM548128BL is a 1-Mbit, high-speed and low power CMOS Pseudo Static RAM organized as 131,072-word

8-bit.

The MSM548128BL is fabricated using silicon gate N well CMOS process.

Features

  • a static RAM-like write function that writes the data into the memory cell at the rising edge of WE. The MSM548128BL is pin compatible with CMOS static RAM and 256K pseudo static RAM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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E2L0043-17-Y1 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM548128BL 131,072-Word ¥ 8-Bit High-Speed PSRAM This version: Jan. 1998 MSM548128BL Previous version: Dec. 1996 DESCRIPTION The MSM548128BL is a 1-Mbit, high-speed and low power CMOS Pseudo Static RAM organized as 131,072-word ¥ 8-bit. The MSM548128BL is fabricated using silicon gate N well CMOS process. This process, coupled with single-transistor memory storage cells, permits maximum circuit density, minimum chip size, and high speed. MSM548128BL has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically.