MSM548128BL Datasheet | OKI Electric

DESCRIPTION The MSM548128BL is a 1-Mbit, high-speed and low power CMOS Pseudo Static RAM organized as 131,072-word - 8-bit. The MSM548128BL is fabricated using silicon gate N well CMOS process. This process, coupled with single-transistor memory storage cells, permits maximum circuit density, minimum chip size, and high speed. MSM548128BL has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically. This series allows low power consumption when using standby mode with Self-refresh. The MSM548128BL also features a static RAM-like write function that writes the data into the memory cell at the rising edge of WE. The MSM548128BL is pin patible with CMOS static RAM and 256K pseudo static RAM. FEATURES - Large capacity - Fast access time - Low power - Refresh free - Pin patible - Logic patible - Single power supply - Refresh - Package patible - Package options: 32-pin 600 mil plastic DIP 32-pin 525 mil plastic SOP : : : : : : : : : 1-Mbit (131,072-word - 8 bits) 70 ns max. 200 µ A max. (standby with Self-refresh) Self refresh SRAM, 256K PSRAM SRAM WE pin, no address multiplex 5 V ± 10% 512 cycle/8 ms auto-address refresh SRAM standard package (DIP32-P-600-2.54) (Product : MSM548128BL-xx RS) (SOP32-P-525-1.27-K) (Product : MSM548128BL-xx GS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM548128BL-70RS MSM548128BL-80RS MSM548128BL-70GS-K MSM548128BL-80GS-K Access Time (Max.) 70 ns 80 ns 70 ns 80 ns Package 600 mil 32-pin Plastic DIP 525 mil 32-pin Plastic SOP 1/12 .. ¡ Semiconductor PIN CONFIGURATION (TOP VIEW) RFSH 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 I/O0 13 I/O1 14 I/O2 15 VSS 16 32-Pin Plastic DIP 32 VCC 31 A15 30 CS 29 WE 28 A13 27 A8 26 A9 25 A11 24 OE 23 A10 22 CE 21 I/O7 20 I/O6 19 I/O5 18 I/O4 17 I/O3 RFSH 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 I/O0 13...