20N60 - N-Channel MOSFET

onsemi

General Description

SuperFET MOSFET is onsemi’s first generation of high voltage super

junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

650 V @ TJ = 150°C.
Typ. RDS(on) = 150 mW.
Ultra Low Gate Charge (Typ. Qg = 75 nC ).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 165 pF ).
100% Avalanche Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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20N60 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	20N60
Manufacturer	onsemi
File Size	420.52 KB
Description	N-Channel MOSFET
Datasheet	20N60 Datasheet

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MOSFET – N-Channel, SuperFET) 600 V, 20 A, 190 mW FCP20N60, FCPF20N60 Description SuperFET MOSFET is onsemi’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mW • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.