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2N5457G - N-Channel MOSFET

Download the 2N5457G datasheet PDF. This datasheet also covers the 2N5457 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N.
  • Channel for Higher Gain.
  • Drain and Source Interchangeable.
  • High AC Input Impedance.
  • High DC Input Resistance.
  • Low Transfer and Input Capacitance.
  • Low Cross.
  • Modulation and Intermodulation Distortion.
  • Plastic Encapsulated Package.
  • Pb.
  • Free Packages are Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5457_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5457G
Manufacturer onsemi
File Size 130.61 KB
Description N-Channel MOSFET
Datasheet download datasheet 2N5457G Datasheet

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Other Datasheets by onsemi

Part Number Description
2N5457 N-Channel MOSFET
2N5458 N-Channel MOSFET
2N5458G N-Channel MOSFET
2N5400 Amplifier Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5457, 2N5458 JFETs - General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low Transfer and Input Capacitance • Low Cross−Modulation and Intermodulation Distortion • Plastic Encapsulated Package • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Drain −Gate Voltage Reverse Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDS VDG VGSR IG PD 25 Vdc 25 Vdc −25 Vdc 10 mAdc 310 mW 2.