• Part: 2N5457G
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 130.61 KB
Download 2N5457G Datasheet PDF
onsemi
2N5457G
Features - N- Channel for Higher Gain - Drain and Source Interchangeable - High AC Input Impedance - High DC Input Resistance - Low Transfer and Input Capacitance - Low Cross- Modulation and Intermodulation Distortion - Plastic Encapsulated Package - Pb- Free Packages are Available- MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage Drain - Gate Voltage Reverse Gate - Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDS VDG VGSR IG PD Vdc Vdc - 25 Vdc 10 m Adc 310 m W 2.82 m W/°C Operating Junction Temperature °C Storage Temperature Range Tstg - 65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. http://onsemi. 1 DRAIN 3 GATE 2 SOURCE MARKING DIAGRAM STRAIGHT LEAD...