The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SA1020
One Watt High Current PNP Transistor
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C
VCE
50
Vdc
VCB
50
Vdc
VEB
5.0
Vdc
IC
2.0
Adc
PD
900
mW
5.0 mW/°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
1.5
W
12 mW/°C
Operating and Storage Junction Temperature TJ, Tstg −55 to
°C
Range
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
2SA1020 Datasheet
