2SA1708 - Bipolar Transistor

onsemi

Key Features

http://onsemi. com Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)1 (--.

2SA1708 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SA1708
Manufacturer	onsemi
File Size	641.12 KB
Description	Bipolar Transistor
Datasheet	2SA1708 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN3094B 2SA1708/2SC4488 Bipolar Transistor (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP Features • • • http://onsemi.com Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)1 (--)2 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.