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2SA1708 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET, MBIT processes.
  • High breakdown voltage, large current capacity.
  • Fast switching speed. Package Dimensions unit:mm 2064A [2SA1708/2SC4488] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1708 2.54 2.54 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempe.

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Ordering number:ENN3094 www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed. Package Dimensions unit:mm 2064A [2SA1708/2SC4488] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1708 2.54 2.