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2SA1709 - Bipolar Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Fast switching speed.
  • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)2 (--)3 1 150 --.

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Datasheet Details

Part number 2SA1709
Manufacturer onsemi
File Size 552.34 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA1709 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP http://onsemi.com Features • Adoption of FBET, MBIT processes • Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)2 (--)3 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.