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2SA1709 - PNP/NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Fast switching speed.
  • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Package Dimensions unit : mm (typ) 7540-001 6.9 1.45 2.5 1.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA1700 PNP Epitaxial Silicon Transistor
2SA1701 PNP/NPN Epitaxial Planar Silicon Transistors
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2SA1703 PNP/NPN Epitaxial Planar Silicon Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN3096A 2SA1709 / 2SC4489 SANYO Semiconductors DATA SHEET 2SA1709/2SC4489 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Package Dimensions unit : mm (typ) 7540-001 6.9 1.45 2.5 1.05 2SA1709S-AN 2SA1709T-AN 2SC4489S-AN 2SC4489T-AN 0.6 0.5 0.