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2SA2112 - Bipolar Transistor

Key Features

  • Adoption of MBIT process.
  • Low collector-to-emitter saturation voltage.
  • Large current capacity.
  • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature VCBO VCES VCEO VEBO IC ICP IB PC Tj Storage Temperature Tstg C.

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Datasheet Details

Part number 2SA2112
Manufacturer onsemi
File Size 526.22 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA2112 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7379A 2SA2112 Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP http://onsemi.