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2SA2126 - Bipolar Transistor

Key Features

  • Adoption of MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • High current capacitance.
  • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings --50 --50 --50 --6 --3 --6 --600 Unit V V V V A A mA.

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Datasheet Details

Part number 2SA2126
Manufacturer onsemi
File Size 300.95 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA2126 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7990A 2SA2126 Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA http://onsemi.com Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • High current capacitance • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings --50 --50 --50 --6 --3 --6 --600 Unit V V V V A A mA Continued on next page. Package Dimensions unit : mm (typ) 7518-003 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.