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2SA2126 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • High current capacitance.
  • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings --50 --50 --50 --6 --3 --6 --600 Unit V V V V A A mA.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA2124 PNP Epitaxial Planar Silicon Transistors
2SA2125 PNP / NPN Epitaxial Planar Silicon Transistors
2SA2112 PNP Transistors
2SA2117 PNP / NPN Epitaxial Planar Silicon Transistors
2SA2168 PNP Epitaxial Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7990A 2SA2126 SANYO Semiconductors DATA SHEET 2SA2126 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • High current capacitance • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings --50 --50 --50 --6 --3 --6 --600 Unit V V V V A A mA Continued on next page.