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DATA SHEET www.onsemi.com
Bipolar Transistor
–20 V, –5 A, Low VCE(sat), PNP Single PCP
2SB1302
Features
• Adoption of FBET, MBIT Processes • Large Current Capacity • Ultrasmall Size Making it Easy to Provide High−Density
Small−Sized Hybrid IC’s
• Low Collector to Emitter Saturation Voltage • Fast Switching Speed • These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters, Motor Drivers, Relay Drivers, Lamp Drivers
SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
−25
V
Collector to Emitter Voltage
VCEO
−20
V
Emitter to Base Voltage
VEBO
−5
V
Collector Current
IC
−5
A
Collector Current (Pulse)
ICP
−8
A
Collector Dissipation (Note 1)
PC
1.