2SC3645 - PNP / NPN Epitaxial Planar Silicon Transistors

onsemi

Key Features

Adoption of FBET process.
High breakdown voltage (VCEO=160V).
Excellent linearity of hFE and small Cob.
Fast switching speed.
Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S.

2SC3645 pnp / npn epitaxial planar silicon transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	2SC3645
Manufacturer	onsemi
File Size	93.20 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3645 Datasheet

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2SA1415 / 2SC3645 Ordering number : EN1720B 2SA1415 / 2SC3645 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Marking : 2SA1415 : AA, 2SC3645: CA Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Moutned on ceramic board (250mm2✕0.