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2SC3645 - Transistor

Key Features

  • Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range.
  • Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC.
  • Tj Tstg Rating 180 160 5 140 200 500 1.3 150 -55.

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SMD Type High-Voltage Switching Applications 2SC3645 Transistors Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 180 160 5 140 200 500 1.