2SC3647 Key Features
- Adoption of FBET, MBIT Processes
- High Breakdown Voltage and Large Current Capacity
- Ultrasmall Size Making it Easy to Provide High-density Small-sized
- These Devices are Pb-Free and Halide Free
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC3647 | PNP / NPN Epitaxial Planar Silicon Transistor | |
Unisonic Technologies |
2SC3647 | NPN EPITAXIAL SILICON TRANSISTOR |
Kexin Semiconductor |
2SC3647 | NPN Transistor |