2SC3647 - Bipolar Transistor

onsemi

Key Features

Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Speciﬁcations ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperatur.

2SC3647 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SC3647
Manufacturer	onsemi
File Size	222.04 KB
Description	Bipolar Transistor
Datasheet	2SC3647 Datasheet

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Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Speciﬁcations ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings (--)120 (--)100 (--)6 (--)2 (--)3 500 1.