Unisonic Technologies 2SC3647
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | 2SC3647 |
|---|---|
| Datasheet | 2SC3647 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
●FEATURES
* High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs 1 SOT-89● ORDERING INFORMATION Ordering Number 2SC3647G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-039.D 2SC3647 NPN SILICON TRANSISTOR
● ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage Emitter to Base Voltage VCEO 100 V VEBO 6 V Collector Current Collector Current (Pulse) IC 2 A ICP 3 A Collector Dissipation Junction Temperature PC 500 mW TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
