onsemi 2SC3647
Bipolar Transistor
| Part No. | 2SC3647 |
|---|---|
| Datasheet | 2SC3647 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Adoption of FBET, MBIT Processes● High Breakdown Voltage and Large Current Capacity
● Ultrasmall Size Making it Easy to Provide High−density Small−sized Hybrid ICs
● These Devices are Pb−Free and Halide Free SPECIFICATIONS ( ): 2SA1417 2 1 3 2SA1417 2 1 : Base 1 2 : Collector 3 : Emitter 3 2SC3647
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Symbol Parameter Conditions Ratings Unit VCBO Collector−to−Base Voltage (−)120 V VCEO Collector−to−Emitter Voltage (−)100 V VEBO Emitter−to− Base Voltage (−)6 V IC Collector Current (−)2 A ICP Collector Current (Pulse) (−)3 A PC Collector Dissipation Tj Junction Temperature When mounted on ceramic substrate (250 mm2 x 0.8 mm) 500 mW 1.5 W 150 °C Tstg Storage Temperature − 55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM AC LOT No. CC LOT No. RANK RANK...
