2SC3649 - Bipolar Transistor

onsemi

Key Features

Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Speciﬁcations ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Ts.

2SC3649 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SC3649
Manufacturer	onsemi
File Size	229.06 KB
Description	Bipolar Transistor
Datasheet	2SC3649 Datasheet

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Other Datasheets by onsemi

Part Number	Description
2SC3645	PNP / NPN Epitaxial Planar Silicon Transistors
2SC3646	Bipolar Transistor
2SC3647	Bipolar Transistor
2SC3648	Bipolar Transistor
2SC3332	Bipolar Transistor

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Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Speciﬁcations ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings (--)180 (--)160 (--)6 (--)1.5 (--)2.5 500 1.