| Part number | 2SC3642 |
|---|---|
| Datasheet | 2SC3642-INCHANGE.pdf |
| File Size | 183.55 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3642 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3642 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
See all Inchange Semiconductor datasheets
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| 2SC3621 | NPN Transistor |
| 2SC3631-Z | NPN Transistor |
| 2SC3632 | NPN Transistor |
| 2SC3632-Z | NPN Transistor |
| 2SC3675 | NPN Transistor |
| 2SC3676 | NPN Transistor |
| 2SC3677 | NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |
