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2SC3640 - Silicon NPN Power Transistor

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Part number 2SC3640
Manufacturer Inchange Semiconductor
File Size 198.62 KB
Description Silicon NPN Power Transistor
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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) Fast Speed High reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Cu

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