Datasheet Details
| Part number | 2SC3640 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.62 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3640-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3640 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.62 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3640-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current- Pulse Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 140 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3640 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
| Part Number | Description |
|---|---|
| 2SC3619 | Silicon NPN Power Transistors |
| 2SC3626 | Silicon NPN Power Transistors |
| 2SC3627 | Silicon NPN Power Transistors |
| 2SC3636 | Silicon NPN Power Transistors |
| 2SC3637 | Silicon NPN Power Transistors |
| 2SC3638 | Silicon NPN Power Transistors |
| 2SC3657 | Silicon NPN Power Transistors |
| 2SC3658 | Silicon NPN Power Transistors |
| 2SC3659 | Silicon NPN Power Transistors |
| 2SC3678 | Silicon NPN Power Transistors |