Kexin Electronics 2SC3646
NPN Transistor
| Part No. | 2SC3646 |
|---|---|
| Datasheet | 2SC3646 Download |
| Manufacturer | Kexin Electronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
2SC3646 TransistorsFEATURES
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching TimeABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 120 100 6 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = 100V , IE = 0 VEB = 4V , IC = 0 120 100 6 100 0.2 0.85 120 13 80 See Test Circuit.
