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2SC3646 Datasheet PDF

Sanyo Electric 2SC3646

PNP/NPN Epitaxial Planar Silicon Transistors

Part No. 2SC3646
Datasheet 2SC3646 Download
Manufacturer
Sanyo Electric
Description PNP/NPN Epitaxial Planar Silicon Transistors
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2SC3646 datasheet page 1 preview

APPLICATIONS

FEATURES

● Adoption of FBET, MBIT processes.
● High breakdown voltage and large current capacity.
● Fast switching time.
● Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1416 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Conditions Moutned on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)100V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)100mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)100mA * : The 2SA1416/2SC...
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