onsemi 2SC3646
Bipolar Transistor
| Part No. | 2SC3646 |
|---|---|
| Datasheet | 2SC3646 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Adoption of FBET, MBIT processes● High breakdown voltage and large current capacity
● Fast switching speed
● Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1416
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings (--)120 (--)100 (--)6 (--)1 (--)2 500 1.3 150 --55 to +150 Unit V V V A A mW W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2...
