Ultrasmall-sized package permitting the 2SC4399-
applied sets to be made small and slim. 0.425
Package Dimensions
unit:mm 2059B
[2SC4399]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
0.425
12 0.65 0.65
2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENN3020
2SC4399
NPN Epitaxial Planar Silicon Transistors
High-Frequency General-Purpose
Amplifier Applications
Features
· High power gain : PG=25dB typ (f=100MHz). · Ultrasmall-sized package permitting the 2SC4399-
applied sets to be made small and slim.
0.425
Package Dimensions
unit:mm 2059B
[2SC4399]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
0.425
12 0.65 0.65
2.
2SC4399 Datasheet
