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2SC4399 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High power gain : PG=25dB typ (f=100MHz).
  • Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4399] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Tempera.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB typ (f=100MHz). · Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4399] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.