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RF Transistor
10 V, 70 mA, fT = 7 GHz, NPN Single MCP
2SC5226A
Features
• Low−noise: NF = 1.0 dB Typ (f = 1 GHz) • High Gain: ⎪S21e⎪2 = 12 dB Typ (f = 1 GHz) • High Cut−off Frequency: fT = 7 GHz Typ • This is a Pb−Free Device
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO
IC PC Tj
Collector−to−Base Voltage Collector−to−Emitter Voltage Emitter−to−Base Voltage Collector Current Collector Dissipation Junction Temperature
20
V
10
V
2
V
70
mA
150
mW
150
°C
Tstg Storage Temperature
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.
2SC5226A Datasheet
