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2SC5226 - NPN TRANSISTOR

Key Features

  • Low noise : NF=1.0dB typ (f=1GHz).
  • High gain : S21e2=12dB typ (f=1GHz).
  • High cutoff frequency : fT=7GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5226] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Tem.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5227 NPN TRANSISTOR
2SC5228 NPN TRANSISTOR
2SC5229 NPN TRANSISTOR
2SC5230 NPN TRANSISTOR
2SC5231 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5226] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications 0.425 12 0.65 0.65 2.0 0.3 0.6 0.