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2SC5227A - RF Transistor

Key Features

  • Low-noise : NF=1.0dB typ (f=1GHz).
  • High gain : ⏐S21e⏐2=12dB typ (f=1GHz).
  • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 2 70 200 150 --55 to +150 Unit V V V mA mW °C °C Stresses excee.

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Datasheet Details

Part number 2SC5227A
Manufacturer onsemi
File Size 237.37 KB
Description RF Transistor
Datasheet download datasheet 2SC5227A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1063A 2SC5227A RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP http://onsemi.com Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 2 70 200 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.