2SD1062 - PNP / NPN Epitaxial Planar Silicon Transistors

onsemi

Key Features

Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V(PNP), 0.4V(NPN) max.
Wide ASO leading to high resistance to breakdown. Specifications ( ) : 2SB826 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=.

2SD1062 pnp / npn epitaxial planar silicon transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	2SD1062
Manufacturer	onsemi
File Size	92.38 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SD1062 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD1062	PNP/NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SD1062	NPN Transistor	INCHANGE
2SD1062	SILICON POWER TRANSISTOR	SavantIC
2SD1060	NPN Transistor	INCHANGE
2SD1060	PNP/NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device

Other Datasheets by onsemi

Part Number	Description
2SD1060	Bipolar Transistor
2SD1012	Bipolar Transistor
2SD1048	Bipolar Transistor
2SD1207	PNP / NPN Epitaxial Planar Silicon Transistors
2SD1618	Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SB826 / 2SD1062 Ordering number : EN723I 2SB826 / 2SD1062 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 12A Switching Applications Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features • Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V(PNP), 0.4V(NPN) max. • Wide ASO leading to high resistance to breakdown.