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2SD1062 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low-saturation collector-to-emitter voltage : VCE(sat)=.
  • 0.5V (PNP), 0.4V (NPN) max.
  • Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010C [2SB826/2SD1062] ( ) : 2SB826 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:723H PNP/NPN Epitaxial Planar Silicon Transistors 2SB826/2SD1062 50V/12A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown.