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2SD1623 - Bipolar Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • Large current capacity and wide ASO.
  • Fast switching speed.
  • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Coll.

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Datasheet Details

Part number 2SD1623
Manufacturer onsemi
File Size 236.81 KB
Description Bipolar Transistor
Datasheet download datasheet 2SD1623 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN1727F 2SB1123/2SD1623 Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.