2SK1069
2SK1069 is N-Channel Junction Silicon FET manufactured by onsemi.
Features
- Adoption of FBET process.
- Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer.
2.1 1.250
0.3 3
0.15 0 to 0.1
12 0.65 0.65
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSX VGDS
IG ID PD Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=- 10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=- 20V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=10V, VGS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1µA
Forward Transfer Admittance
| yfs | VDS=10V, VGS=0, f=1k Hz
- : The 2SK1069 is classified by IDSS as follows (unit : m A) :
1.2 3 3.0 2.5 4 6.0 5.0 5 12.0
(Note) Marking : FJ
IDSS rank : 3, 4, 5
- For CP package version, use the...
