2SK1069 - N-Channel Junction Silicon FET

onsemi

Key Features

Adoption of FBET process.
Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. 2.1 1.250 0.3 3 0.15 0 to 0.1 0.2 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Electrical Characteristics at Ta = 25˚.

2SK1069 n-channel junction silicon fet by onsemi - Datasheet Preview

Datasheet Details

Part number	2SK1069
Manufacturer	onsemi
File Size	137.40 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK1069 Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : EN2749 2SK1069 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Package Dimensions unit:mm 2058 [2SK1069] 0.425 Features · Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. 2.1 1.250 0.3 3 0.15 0 to 0.1 0.2 12 0.65 0.65 2.0 0.3 0.6 0.9 0.