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2SK1069 - N-Channel Junction Silicon FET

Key Features

  • Adoption of FBET process.
  • Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Co.

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Part Number Description
2SK1065 N-Channel Junction Silicon FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Features · Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.