2SK3738 - N-Channel JFET

onsemi

Key Features

Small IGSS.
Small Ciss.
Ultrasmall package permitting applied sets to be small and slim Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 100 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. M.

2SK3738 n-channel jfet by onsemi - Datasheet Preview

Datasheet Details

Part number	2SK3738
Manufacturer	onsemi
File Size	383.38 KB
Description	N-Channel JFET
Datasheet	2SK3738 Datasheet

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2SK3703	N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7671A 2SK3738 N-Channel JFET 40V, 50 to 130μA, 0.13mS, SMCP http://onsemi.com Applications • Impedance conversion • Infrared sensor Features • Small IGSS • Small Ciss • Ultrasmall package permitting applied sets to be small and slim Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 100 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.