es
Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be small and slim. 3
0.75 0.6 0~0.1
1
2
0.5 0.5 1.6
0.2
0.1
0.1max
1 : Source 2 : Drain 3 : Gate
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Conditions
SANYO : SMCP
Ratings 40 --40 10 1 100 150 --55 to +150
Unit V V mA mA mW.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENN7671
2SK3738
N-Channel Junction Silicon FET
2SK3738
Impedance Converter Applications
Application
• •
Package Dimensions
unit : mm 2124
[2SK3738]
0.3
0.4 0.8 0.4 1.6
Impedance conversion. Infrared sensor.
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• • •
Features
Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be small and slim.
3
0.75 0.6 0~0.1
1
2
0.5 0.5 1.6
0.2
0.1
0.
2SK3738 Datasheet
