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2SK3820 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)1=45mΩ(typ. ).
  • Input capacitance Ciss=2150pF (typ. ).
  • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=20V, L=200μH, IAV=26A (Fig.1).

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Datasheet Details

Part number 2SK3820
Manufacturer onsemi
File Size 166.50 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK3820 Datasheet

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Full PDF Text Transcription

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Ordering number : EN8147A 2SK3820 N-Channel Power MOSFET 100V, 26A, 60mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input capacitance Ciss=2150pF (typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=20V, L=200μH, IAV=26A (Fig.1) *2 L≤200μH, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 100 ±20 26 104 1.65 50 150 --55 to +150 84.5 26 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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