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2SK3820 - N-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • 4V drive.
  • Ultrahigh-speed switching.
  • Motor drive, DC / DC converter.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse).
  • 1 Avalanche Current.
  • 2 Note :.
  • 1 VDD=20V, L=200µH, IAV=26A.
  • 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN8147 2SK3820 2SK3820 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Note : *1 VDD=20V, L=200µH, IAV=26A *2 L≤200µH, single pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings 100 ±20 26 104 1.65 50 150 --55 to +150 84.