2SK4125 - N-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)=0.47Ω (typ. ).
Input capacitance Ciss=1200pF (typ. ).
10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Tc=25°C (Our ideal heat dissipation condition).
1 600 V ±30 V 17 A 52 A 2.5 W 170 W 150 °C Storage.

2SK4125 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	2SK4125
Manufacturer	onsemi
File Size	208.67 KB
Description	N-Channel Power MOSFET
Datasheet	2SK4125 Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA0747B 2SK4125 N-Channel Power MOSFET 600V, 17A, 610mΩ, TO-3P-3L http://onsemi.com Features • ON-resistance RDS(on)=0.47Ω (typ.) • Input capacitance Ciss=1200pF (typ.) • 10V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Tc=25°C (Our ideal heat dissipation condition)*1 600 V ±30 V 17 A 52 A 2.5 W 170 W 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *2 EAS Avalanche Current *3 IAV *1 Our condition is radiation from backside. 78.