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Ordering number : ENA0747A
2SK4125
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4125
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *2 Avalanche Current *3 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*1 Conditions Ratings 600 ±30 17 52 2.5 170 150 --55 to +150 86.