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3LN01M - Small Signal MOSFET

Datasheet Summary

Features

  • Low ON-Resistance.
  • Ultrahigh-Speed Switching.
  • 1.5V Drive.
  • Halogen Free Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID 30 ±10 0.15 V V A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 0.6 A Power Disspation Junction Temperature Storage Temperature PD 0.15 W Tj 150 °C Tstg.
  • 55 to +150 °C This product is design.

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Datasheet Details

Part number 3LN01M
Manufacturer ON Semiconductor
File Size 300.65 KB
Description Small Signal MOSFET
Datasheet download datasheet 3LN01M Datasheet
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Full PDF Text Transcription

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3LN01M Small Signal MOSFET 30V, 3.7Ω, 0.15A, Single N-Channel Features • Low ON-Resistance • Ultrahigh-Speed Switching • 1.5V Drive • Halogen Free Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID 30 ±10 0.15 V V A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 0.6 A Power Disspation Junction Temperature Storage Temperature PD 0.15 W Tj 150 °C Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model www.onsemi.com Electrical Connection N-Channel 3 1 1:Gate 2:Source 2 3:Drain Packing Type:TL Marking LOT No. YA LOT No.
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