3LN01M
Features
- Low ON-Resistance
- Ultrahigh-Speed Switching
- 1.5V Drive
- Halogen Free pliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage Gate to Source Voltage Drain Current (DC)
VDSS VGSS ID
30 ±10 0.15
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP 0.6 A
Power Disspation Junction Temperature Storage Temperature
Tj 150 °C
Tstg
- 55 to +150
°C
This product is designed to “ESD immunity < 200V- ”, so please take care when handling.
- Machine Model
.onsemi.
Electrical Connection
N-Channel
1:Gate 2:Source 2 3:Drain
Packing Type:TL
Marking
LOT No.
LOT No. TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Electrical Characteristics at Ta = 25°C
Parameter
Symbol...
