• Part: 3LN01C
  • Description: N-Channel Small Signal MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 162.96 KB
Download 3LN01C Datasheet PDF
onsemi
3LN01C
Features - Low ON-resistance - Ultrahigh-speed switching - 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V- ”, so please take care when handling. - Machine Model Ratings 30 ±10 0.15 0.6 0.25 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7013A-013 2.9 0.1 3LN01C-TB-E 3 3LN01C-TB-H Ordering & Package Information Device Package Shipping 3LN01C-TB-E CP SC-59, TO-236, SOT-23,...