3LN02M
Features
- Low ON resistance.
- Ultrahigh-speed switching.
- 2.5V drive.
Package Dimensions unit:mm 2158
[3LN02M]
0.15 3
2.1 1.250
0 to 0.1
1 2 0.65 0.65 2.0
0.3 0.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Gate 2 : Source 3 : Drain SANYO : MCP3
Ratings 30 ±10 0.3 1.2 0.15 150
- 55 to +150
Unit V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=1m A, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=150m A ID=150m A,...
