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3LN02N - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

  • Package Dimensions unit : mm 2178 5.0 4.0 Low ON resistance. Ultrahigh-speed switching. 2.5V drive. [3LN02N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty c.

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Datasheet Details

Part number 3LN02N
Manufacturer Sanyo Semicon Device
File Size 57.89 KB
Description Ultrahigh-Speed Switching Applications
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Ordering number : ENN6549 www.DataSheet4U.com 3LN02N N-Channel Silicon MOSFET 3LN02N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 5.0 4.0 Low ON resistance. Ultrahigh-speed switching. 2.5V drive. [3LN02N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.3 SANYO : NP Ratings 30 ±10 0.3 1.2 0.
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