3LN02N
Features
- -
- Package Dimensions unit : mm 2178
5.0 4.0
Low ON resistance. Ultrahigh-speed switching. 2.5V drive.
[3LN02N]
0.45 0.5
0.6 2.0
1 : Source 2 : Drain 3 : Gate
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
SANYO : NP
Ratings 30 ±10 0.3 1.2 0.4 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1m A, VGS=0 VDS=30V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=150m A Ratings min 30 10 ±10 0.4 0.4 0.56 1.3 typ max Unit V µA µA V S
Marking : YD
Continued...
