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3LN01S - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

  • Package Dimensions unit : mm 2192 [3LN01S] 0.3 0.75 0.6 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.4 0.8 0.4 1.6 3 0~0.1 1 2 0.5 0.5 1.6 0.2 0.1 1 : Gate 2 : Source 3 : Drain Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty.

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Datasheet Details

Part number 3LN01S
Manufacturer Sanyo Semicon Device
File Size 27.87 KB
Description Ultrahigh-Speed Switching Applications
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Ordering number : ENN6957 3LN01S N-Channel Silicon MOSFET 3LN01S Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2192 [3LN01S] 0.3 0.75 0.6 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.4 0.8 0.4 1.6 3 0~0.1 1 2 0.5 0.5 1.6 0.2 0.1 1 : Gate 2 : Source 3 : Drain Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions SANYO : SMCP Ratings 30 ± 10 0.15 0.6 0.15 150 --55 to +150 0.
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