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3LN01SP - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

  • Package Dimensions unit : mm 2180 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [3LN01SP] 2.2 0.4 0.5 0.6 1.8 15.0 0.4 3.0 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Sourc.

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Datasheet Details

Part number 3LN01SP
Manufacturer Sanyo Semicon Device
File Size 53.67 KB
Description Ultrahigh-Speed Switching Applications
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Ordering number : ENN6545 www.DataSheet4U.com 3LN01SP N-Channel Silicon MOSFET 3LN01SP Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2180 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [3LN01SP] 2.2 0.4 0.5 0.6 1.8 15.0 0.4 3.0 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Source 2 : Drain 3 : Gate SANYO : SPA Ratings 30 ±10 0.15 0.6 0.25 150 --55 to +150 Unit V V A A W °C °C 3.0 3.
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